Czochralski
英語
编辑詞源
编辑借自波蘭語 Czochralski,為一姓氏,以發明這一方法的波蘭化學家 Jan Czochralski (1885–1953) 命名。
發音
编辑名詞
编辑Czochralski (不可數)
- (作定語,化學) Czochralski process之簡寫。
- 1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, 出自 Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN,頁號 104:
- Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×1018 cm–2.
- (請為本引文添加中文翻譯)
- 2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, 出自 Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN,頁號 284:
- The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg–1 and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.
- (請為本引文添加中文翻譯)
近義詞
编辑相關詞彙
编辑波蘭語
编辑詞源
编辑發音
编辑專有名詞
编辑Czochralski m 個人 (陰性形式 Czochralska)
- 男性姓氏
變格
编辑Czochralski 的變格
單數 | 複數 | |
---|---|---|
主格 | Czochralski | Czochralscy |
屬格 | Czochralskiego | Czochralskich |
與格 | Czochralskiemu | Czochralskim |
賓格 | Czochralskiego | Czochralskich |
工具格 | Czochralskim | Czochralskimi |
方位格 | Czochralskim | Czochralskich |
呼格 | Czochralski | Czochralscy |