Czochralski
英语 编辑
词源 编辑
借自波兰语 Czochralski，为一姓氏，以发明这一方法的波兰化学家 Jan Czochralski (1885–1953) 命名。
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Czochralski (不可数)
- (作定语，化学) Czochralski process之简写。
- 1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, 出自 Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN，页号 104:
- Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×1018 cm–2.
- （请为本引文添加中文翻译）
- 2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, 出自 Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN，页号 284:
- The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg–1 and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.
- （请为本引文添加中文翻译）
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波兰语 编辑
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专有名词 编辑
Czochralski m 个人 (阴性形式 Czochralska)
- 男性姓氏
变格 编辑
Czochralski的变格
| 单数 | 复数 | |
|---|---|---|
| 主格 | Czochralski | Czochralscy |
| 属格 | Czochralskiego | Czochralskich |
| 与格 | Czochralskiemu | Czochralskim |
| 宾格 | Czochralskiego | Czochralskich |
| 工具格 | Czochralskim | Czochralskimi |
| 方位格 | Czochralskim | Czochralskich |
| 呼格 | Czochralski | Czochralscy |